440322

A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules

Grahn, J.V. ; Malm, B.G. ; Mohadjeri, B. ; Pejnefors, J. ; Sandén, M. ; Wang, Y.-B. ; Radamson, H.H. ; Jonsson, P. ; Jargelius, M. ; Fosshaug, H. ; Linder, M. ; Landgren, G. ; Östling, M.

Royal Institute of Technology, Kista-Stockholm, Sweden

1

1999

13-15 Sept. 1999

728

731

Design optimization; Epitaxial growth; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Manufacturing processes; Robustness; Silicon germanium; Temperature;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505606