DocumentCode
440322
Title
A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules
Author
Grahn, J.V. ; Malm, B.G. ; Mohadjeri, B. ; Pejnefors, J. ; Sandén, M. ; Wang, Y.-B. ; Radamson, H.H. ; Jonsson, P. ; Jargelius, M. ; Fosshaug, H. ; Linder, M. ; Landgren, G. ; Östling, M.
Author_Institution
Royal Institute of Technology, Kista-Stockholm, Sweden
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
728
Lastpage
731
Keywords
Design optimization; Epitaxial growth; Epitaxial layers; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Manufacturing processes; Robustness; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505606
Link To Document