Title :
High Tunnelling Current Density in Silicon/Silicon-Germanium Junctions
Author :
Reitemann, G. ; Kasper, E. ; Duschel, R. ; Schmidt, O.G. ; Eberl, K.
Author_Institution :
Universit¨at Stuttgart, Germany
Keywords :
Annealing; Current density; Doping; Germanium silicon alloys; Molecular beam epitaxial growth; Semiconductor diodes; Silicon germanium; Substrates; Temperature; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
