Title :
Boltzmann´s kinetic equation solution for polycrystalline semiconductor
Author :
Lubimsky, V.M. ; Moiseev, A.G.
Author_Institution :
NSTU, Novosibirsk, Russia
fDate :
26 June-2 July 2005
Abstract :
The calculation of potential barriers at grain boundaries in polycrystalline semiconductors appearing under electric field is considered. On the basis of solution for Boltzmann´s kinetic equation the expression for the relaxation time for carriers scattering on disordered system of the barriers is derived. The approach for calculation of current-voltage characteristic in nonlinear approximation for polycrystalline semiconductor is developed.
Keywords :
Boltzmann equation; carrier relaxation time; elemental semiconductors; grain boundaries; kinetic theory; semiconductor thin films; Boltzmann kinetic equation solution; carrier relaxation time; carrier scattering; current-voltage characteristic; disordered system; electric field; grain boundaries; nonlinear approximation; polycrystalline semiconductor; polycrystalline silicon; potential barrier; Crystallization; Current-voltage characteristics; Differential equations; Grain boundaries; Kinetic theory; Nonlinear equations; Scattering; Shape; Space charge; Voltage;
Conference_Titel :
Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
Print_ISBN :
0-7803-8943-3
DOI :
10.1109/KORUS.2005.1507691
