DocumentCode :
44045
Title :
Increased Upconversion Response in a-Si:H Solar Cells With Broad-Band Light
Author :
de Wild, J. ; Duindam, T.F. ; Rath, J.K. ; Meijerink, A. ; van Sark, Wilfried G. J. H. M. ; Schropp, R.E.I.
Author_Institution :
Fac. of Sci., Utrecht Univ., Utrecht, Netherlands
Volume :
3
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
17
Lastpage :
21
Abstract :
High-bandgap solar cells such as a-Si:H with a bandgap around 1.8-eV loose 50% of the incident solar energy due to transmittance of near infrared photons. Part of these photons can be converted into visible photons with a suitable upconverter and in this way can increase the photo response of solar cells in the near infrared. In this contribution, we demonstrate increased photo response of a-Si:H solar cells for sub bandgap light under broad-band light excitation of the upconverter. Broad-band excitation represents daily life and is more effective because simultaneously different wavelengths can be absorbed and converted. Bifacial a-Si:H solar cells were made with and without Gd2O2S: Er3+, Yb3+ upconverter attached at the back of the cells. A set-up was made to concentrate near infrared light from a solar simulator up to 25 times. I-V curves were measured of upconverter and reference solar cells. The upconverter solar cells showed a nonlinear and stronger increase in current with increasing concentration than the reference solar cells.
Keywords :
amorphous semiconductors; elemental semiconductors; energy gap; erbium; gadolinium compounds; hydrogen; luminescence; silicon; solar cells; ytterbium; Gd2O2S:Er,Yb; I-V curves; Si:H; a-Si:H solar cell photoresponse; bifacial a-Si:H solar cells; high-bandgap solar cells; incident solar energy; near infrared light; near infrared photon transmittance; solar simulator; subbandgap light; upconversion response; upconverter broadband light excitation; upconverter solar cell; visible photons; Absorption; Broadband communication; Current measurement; Laser excitation; Photonics; Photovoltaic cells; Wavelength measurement; Amorphous silicon; infrared response; luminescence; photovoltaic cell;
fLanguage :
English
Journal_Title :
Photovoltaics, IEEE Journal of
Publisher :
ieee
ISSN :
2156-3381
Type :
jour
DOI :
10.1109/JPHOTOV.2012.2213799
Filename :
6305456
Link To Document :
بازگشت