Title :
Low-Capacitance SCR Structure for RF I/O Application
Author :
Shurong Dong ; Meng Miao ; Jian Wu ; Jie Zeng ; Zhiwei Liu ; Liou, Juin J.
Author_Institution :
Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.
Keywords :
capacitance; electrostatic discharge; protection; radiofrequency integrated circuits; semiconductor diodes; thyristors; ESD device; RF I/O application; RF I/O protection; SCR structure; Si; diodes; electrostatic discharge; layout design; metal interconnection; parasitic capacitance; silicon controlled rectifier; Capacitance; Electrostatic discharges; Junctions; Layout; Metals; Radio frequency; Thyristors; Electrostatic discharge (ESD); parasitic capacitance; radio frequency (RF);
Journal_Title :
Electromagnetic Compatibility, IEEE Transactions on
DOI :
10.1109/TEMC.2012.2216271
