Title :
Power MOS transistors parameters at operation impacts
Author :
Emelyanov, V.A. ; Baranov, V.V. ; Roubtsevich, I.I. ; Anufriev, D.L.
Author_Institution :
Integral Res. & Production Corp., Minsk, Belarus
Abstract :
Silicon field effect transistors (power MOS transistors of KP728E1 and their analogs that are manufactured by Transistor Factory of Research and Production Corporation "Integral", city of Minsk, Belarus) have been described. Their general structure, packaging type and electrical properties have been given. The essential part of the paper is dedicated to the influence on the transistor parameters a few main factors of operation period such as electrostatic discharges (ESD), temperature, thermal cycles, mechanical impacts etc. In particularity, the effect of mutual influence of the temperature and different polarity of the ESD at 100 /spl deg/C on the threshold voltage of the transistors has been discovered.
Keywords :
electrostatic discharge; elemental semiconductors; field effect transistors; power MOSFET; semiconductor device manufacture; semiconductor device packaging; silicon; 100 degC; Belarus; Integral Transistor Factory of Research and Production Corporation; KP728E1; Minsk; electrical properties; electrostatic discharges; mechanical impacts; packaging type; power MOS transistor parameters; silicon field effect transistors; thermal cycles; Cities and towns; Electrostatic discharge; FETs; MOSFETs; Manufacturing; Packaging; Production facilities; Silicon; Temperature; Thermal factors;
Conference_Titel :
Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on
Conference_Location :
Dubrovnik, Croatia
Print_ISBN :
0-7803-8738-4
DOI :
10.1109/ISIE.2005.1528959
