Title :
A physical analysis of HV MOSFET capacitance behaviour
Author :
Anghel, C. ; Chauhan, Y.S. ; Hefyene, N. ; Ionescu, A.M.
Author_Institution :
EPFL-STI-IMM-LEG, Lausanne, Switzerland
Abstract :
This work reports on the physical effects that appear on the AC characteristics of the high voltage LDMOS transistors. A qualitative explanation for the variation of the charges inside the device is proposed. TCAD simulations are used to sustain the presented theory. Finally, the specific peaks that appear on C/sub GS/ and C/sub GD/ characteristics function of the gate voltage are explained.
Keywords :
high-voltage techniques; power MOSFET; AC characteristics; TCAD; gate voltage; high-voltage MOSFET capacitance behaviour; lateral diffused MOS transistors; technology CAD; Automotive engineering; Capacitance; Interface states; Low voltage; MOSFET circuits; Numerical simulation; Radio frequency; Semiconductor device doping; Threshold voltage; Vehicle dynamics;
Conference_Titel :
Industrial Electronics, 2005. ISIE 2005. Proceedings of the IEEE International Symposium on
Conference_Location :
Dubrovnik, Croatia
Print_ISBN :
0-7803-8738-4
DOI :
10.1109/ISIE.2005.1528963
