${\\rm Ga}_{2}{\\rm O}_{3}{:}{\\rm ITO}$ Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes

Author

Su Jin Kim ; Sang Young Park ; Kyeong Heon Kim ; Suk Won Kim ; Tae Geun Kim

Author_Institution

Sch. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

35

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

232

Lastpage

234

Abstract

Herein, a Ga₂O₃-based indium tin oxide (Ga₂O₃:ITO) thin film is proposed as a replacement for ITO in near-ultraviolet light-emitting diodes (NUV LEDs), and its electrical and optical properties are optimized. The measured sheet resistance and optical transmittance of the Ga₂O₃:ITO thin film were 49 Ω/sq and 93.8% at 405 nm wavelength after optimization, whereas those of ITO films were 52 Ω/sq and 84.4% at that wavelength, respectively. In addition, we found that at 20 mA the output power of the NUV LEDs with Ga₂O₃:ITO top electrodes was 55% greater than that of those with ITO top electrodes.

Keywords

electric properties; electrodes; gallium compounds; indium compounds; light emitting diodes; light transmission; optical properties; Ga₂O₃:ITO; current 20 mA; electrical properties; near ultraviolet light emitting diodes; optical properties; optical transmittance; transparent conducting electrode; wavelength 405 nm; Electrodes; Indium tin oxide; Light emitting diodes; Photonic band gap; Radio frequency; Resistance; Substrates; ${rm Ga}_{2}{rm O}_{3}{:}{rm ITO}$; Ultraviolet light-emitting diode; cosputtering; transparent conducting electrode;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2292080

Filename

6698329