Title :
A low-power high-performance SiGe BiCMOS 802.11a/b/g transceiver IC for cellular and Bluetooth co-existence applications
Author :
Charlon, O. ; Locher, M. ; Visser, H. ; Duperray, D. ; Cherr, J. ; Judson, M. ; Landesman, A. ; Hritz, C. ; Kohlschuetter, U. ; Zhang, Y. ; Ramesh, C. ; Daanen, A. ; Gao, M. ; Haas, S. ; Maheshwari, V. ; Bury, A. ; Nitsche, G. ; Wrzyszcz, A. ; Redman-Whit
Author_Institution :
Philips Semicond., San Jose, CA, USA
Abstract :
This paper describes a low-power, high-performance WLAN 802.11 a/b/g radio transceiver optimized for mobile applications and co-existence with on-board cellular and Bluetooth systems. The direct conversion architecture is optimized to achieve uncompromised RF performance at low power. A key transceiver requirement is a sensitivity of -77dBm (at the LNA input) in the presence of a GSM 1900 transmitter interferer while in 54Mb/s OFDM mode. The receiver chain achieves a NF of 2.8/3.2dB, consuming 168/185mW at 2.8V for the 2.4/5GHz bands respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70GHz fT 0.25μm SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6mm2.
Keywords :
BiCMOS integrated circuits; Bluetooth; Ge-Si alloys; IEEE standards; UHF integrated circuits; cellular radio; low-power electronics; microwave integrated circuits; semiconductor materials; system-in-package; transceivers; wireless LAN; 0.25 micron; 168 mW; 185 mW; 2.4 GHz; 2.8 V; 2.8 dB; 3.2 dB; 5 GHz; 70 GHz; BiCMOS transceiver IC; Bluetooth application; SiGe; WLAN 802.11 abg radio transceiver; baseband modem processor; cellular application; direct conversion architecture; dual-band transceiver; high-performance transceiver IC; low-power transceiver IC; mobile applications; signal loopback; system-in-package; transmit power detection; transmitter I-Q imbalance; transmitter LO leakage; transmitter interference; tri-mode transceiver; uncompromised RF performance; Application specific integrated circuits; BiCMOS integrated circuits; Bluetooth; GSM; Germanium silicon alloys; Radio frequency; Radio transceivers; Radio transmitters; Silicon germanium; Wireless LAN;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541576
