Title :
Deep trench isolation effect on self-heating and RF performances of SiGeC HBTs
Author :
Barbalat, Benoît ; Schwartzmann, Thierry ; Chevalier, Pascal ; Jagueneau, Thierry ; Vandelle, Benoît ; Rubaldo, Laurent ; Saguin, Fabienne ; Zerounian, Nicolas ; Aniel, Frédéric ; Chantre, Alain
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
This paper focuses on the effect of deep trench isolation (DTI) on self-heating and electrical performances of state-of-the-art SiGeC heterojunction bipolar transistors (HBTs). The influence of DTI on the heat dissipation and on the thermal resistance of HBTs is studied both with electrical measurements and simulations. The results show that the DTI has a significant influence on heat dissipation and on the thermal resistance values but only little impact on RF performances.
Keywords :
heterojunction bipolar transistors; isolation technology; silicon compounds; thermal resistance; SiGeC; deep trench isolation effect; heat dissipation; heterojunction bipolar transistors; self heating; thermal resistance; Bipolar transistors; Diffusion tensor imaging; Electric resistance; Electrical resistance measurement; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Radio frequency; Resistance heating; Thermal resistance;
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
DOI :
10.1109/ESSDER.2005.1546602
