DocumentCode :
443938
Title :
Influence of ballistic and pocket effects on electron mobility in Si MOSFETs
Author :
Lusakowski, J. ; Knap, W. ; Meziani, Y. ; Cesso, J.-P. ; El Fatimy, A. ; Tauk, R. ; Dyakonova, N. ; Ghibaudo, G. ; Boeuf, F. ; Skotnicki, T.
Author_Institution :
GES CNRS-UMR, Univ. Montpellier, France
fYear :
2005
fDate :
12-16 Sept. 2005
Firstpage :
561
Lastpage :
564
Abstract :
Room temperature magnetoresistance of nanometer bulk Si n-type MOSFETs was measured at magnetic fields up to 10 T. The electron magnetoresistance mobility was determined for transistors with the gate length in 30 nm to 1000 nm range and was shown to decrease with decreasing the gate length. We show that the mobility reduction is caused both by the ballistic motion and the pocket effect and that for the strong inversion the influence of both limitations on the mobility is comparable.
Keywords :
MOSFET; electron mobility; elemental semiconductors; enhanced magnetoresistance; silicon; 30 to 1000 nm; MOSFET; Si; ballistic motion; electron magnetoresistance mobility; magnetic field; pocket effect; Ballistic magnetoresistance; Capacitance measurement; Electrical resistance measurement; Electron mobility; Length measurement; MOSFETs; Magnetic field measurement; Scattering; Temperature; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European
Print_ISBN :
0-7803-9203-5
Type :
conf
DOI :
10.1109/ESSDER.2005.1546710
Filename :
1546710
Link To Document :
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