Title :
Spin-coherence-induced hole burning in charged GaAs quantum dots
Author :
Cheng, Jun ; Xu, Xiaodong ; Dutt, M. V Gurudev ; Wu, Yanwen ; Steel, D.G. ; Bracker, A.S. ; Gammon, D. ; Sham, L.J.
Author_Institution :
H. M. Randall Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Spin-coherence-induced hole burning is clearly identified in high-resolution nearly degenerate differential transmission experiment. The inhomogeneously broadened spin decoher-ence time is extracted from the narrow hole-burning widths, and approaches 11 nsec at zero field.
Keywords :
III-V semiconductors; gallium arsenide; interface states; light coherence; optical hole burning; semiconductor quantum dots; 11 ns; GaAs; charged GaAs quantum dots; degenerate differential transmission; inhomogeneously broadened spin decoherence time; narrow hole-burning width; spin-coherence-induced hole burning; zero field; Electron optics; Gallium arsenide; Laser excitation; Magnetic fields; Magnetic resonance; Nonlinear optics; Optical pumping; Optical scattering; Quantum dots; Trions;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548665
