DocumentCode
444129
Title
Spin-memory and anomalous polarization properties of single InGaAs/GaAs quantum dots
Author
Ebbens, A. ; Krizhanovskii, D.N. ; Tartakovskii, A.I. ; Pulizzi, F. ; Saveliev, A.V. ; Wright, T. ; Skolnick, M.S. ; Hopkinson, M.
Author_Institution
Dept. of Phys. & Astron., Univ. of Sheffield, UK
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
317
Abstract
Control of electronic spins in individual InGaAs quantum dots is achieved by applying vertical electric and magnetic fields. In addition, dots with anomalously large degree of linear polarization are found weakly affected by magnetic field.
Keywords
III-V semiconductors; electron spin polarisation; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dot; anomalous polarization property; electronic spin control; linear polarization; photoluminescence spectra; spin-memory; vertical electric feild; vertical magnetic field; Excitons; Gallium arsenide; Indium gallium arsenide; Magnetic fields; Magnetic properties; Optical polarization; Photoluminescence; Quantum computing; Quantum dots; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548767
Filename
1548767
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