Title :
Single photon emission from gallium nitride quantum dots at a record-short wavelength of 357 nm
Author :
Kako, S. ; Hoshino, K. ; Ishida, S. ; Arakawa, Y. ; Santori, C. ; Götzinger, S. ; Yamamoto, Y.
Author_Institution :
Inst. of Ind. Sci., Tokyo Univ., Japan
Abstract :
We present measurements of the second-order coherence function on emission from single GaN quantum dots. A large degree of photon antibunching is observed, demonstrating single-photon source operating at a record-short wavelength of 357 nm.
Keywords :
III-V semiconductors; gallium compounds; photoluminescence; photon antibunching; semiconductor quantum dots; 357 nm; GaN; photon antibunching; second-order coherence function; single GaN quantum dot; single photon emission; Adaptive optics; Coherence; Gallium nitride; III-V semiconductor materials; Optical buffering; Optical distortion; Optical receivers; Optical transmitters; Quantum dots; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548770
