DocumentCode
444190
Title
Intraband carrier relaxation in semiconductor quantum rods: competition between phonon-assisted cooling and Auger heating
Author
Achermann, M. ; Bartko, A.P. ; Hollingsworth, J.A. ; Klimov, V.I.
Author_Institution
Chem. Div., Los Alamos Nat. Lab., NM, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
507
Abstract
We study intraband carrier dynamics in elongated CdSe nanocrystals and observe that in the high-intensity regime, carrier heating through Auger recombination becomes very efficient, leading to a significant slowing down of carrier cooling dynamics.
Keywords
Auger effect; II-VI semiconductors; cadmium compounds; electron-hole recombination; elongation; nanostructured materials; photoluminescence; semiconductor quantum wells; time resolved spectra; wide band gap semiconductors; Auger heating; Auger recombination; CdSe; carrier cooling dynamics; elongated cadmium selenide nanocrystal; high-intensity carrier heating; intraband carrier dynamics; intraband carrier relaxation; phonon-assisted cooling; semiconductor quantum rod; time-resolved photoluminescence technique; Charge carrier density; Cooling; Heating; Laser excitation; Lead compounds; Nanocrystals; Radiative recombination; Semiconductor materials; Spontaneous emission; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548832
Filename
1548832
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