Title :
Lateral diffusion of excitons in double quantum well structures
Author :
Voros, Z. ; Balili, R. ; Snoke, D. ; Pfeiffer, L. ; West, K.
Author_Institution :
Dept. of Phys. & Astron., Pittsburgh Univ., PA, USA
Abstract :
We report on lateral diffusion measurements of excitons in GaAs/AlGaAs double quantum wells of various width. In wide quantum wells the excitons have lifetime up to 10 microseconds and diffusion length up to 500 microns.
Keywords :
aluminium compounds; diffusion; excitons; gallium compounds; photoluminescence; radiative lifetimes; semiconductor quantum wells; time resolved spectra; GaAs-AlGaAs; GaAs-AlGaAs double quantum well structures; excitons lifetime; lateral diffusion measurements; time-resolved photoluminescence spectroscopy; Charge carrier processes; Electrons; Excitons; Extraterrestrial measurements; Gallium arsenide; Luminescence; Molecular beam epitaxial growth; Optical imaging; Spectroscopy; Wavelength measurement;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1548907
