• DocumentCode
    444320
  • Title

    Femtosecond laser ablation of silicon (100) with thermal oxide thin films of varying thickness

  • Author

    McDonald, Joel P. ; Ray, Katherine E. ; Mistry, Vanita R. ; Mourou, Gérard ; Yalisove, Steven M.

  • Author_Institution
    Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    2
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    910
  • Abstract
    Femtosecond laser ablation of silicon (100) with thermal oxide thin films was studied in order to further understand the ablative properties of thin films and to evaluate their influence on the ablation of the substrate.
  • Keywords
    high-speed optical techniques; laser ablation; semiconductor thin films; silicon compounds; Si-SiO2; amorphous material; femtosecond laser ablation; glass; silicon; thermal oxide thin film; Laser ablation; Laser beams; Laser theory; Optical films; Optical pulses; Semiconductor thin films; Silicon; Surface emitting lasers; Surface morphology; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2005. QELS '05
  • Print_ISBN
    1-55752-796-2
  • Type

    conf

  • DOI
    10.1109/QELS.2005.1548979
  • Filename
    1548979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=444320