• DocumentCode
    444349
  • Title

    InGaN/GaN MQW laser diodes with 4th order FIB-etched gratings

  • Author

    Sanz, D. Cortaberria ; Rorison, JM ; Yu, S.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bristol Univ., UK
  • Volume
    2
  • fYear
    2005
  • fDate
    22-27 May 2005
  • Firstpage
    1023
  • Abstract
    Spatially coherent vertical emission is demonstrated in an electrically pumped InGaN/GaN MQW laser with 4th order surface gratings defined by Focused Ion Beam etching, with vertical output power 6 times above scattering background levels.
  • Keywords
    III-V semiconductors; diffraction gratings; focused ion beam technology; gallium compounds; indium compounds; laser beams; optical pumping; quantum well lasers; semiconductor quantum wells; sputter etching; 4th order FIB-etched gratings; 4th order surface gratings; InGaN-GaN; MQW laser diodes; electrically pumped laser; focused ion beam etching; spatially coherent vertical emission; vertical output power; Diode lasers; Gallium nitride; Gratings; Ion beams; Laser excitation; Power lasers; Pump lasers; Quantum well devices; Spatial coherence; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2005. QELS '05
  • Print_ISBN
    1-55752-796-2
  • Type

    conf

  • DOI
    10.1109/QELS.2005.1549017
  • Filename
    1549017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=444349