Title :
Influence of Post-Annealing on Resistivity of VOx Thin Film
Author :
Rong-Hong Chen ; Yu-Long Jiang ; Bing-Zong Li
Author_Institution :
State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China
Abstract :
The influence of post-annealing (PA) on the resistivity of 55-nm VOx film (~1.2 Ω · cm) is investigated in this letter. For the first time, it is demonstrated that PA can effectively lower the film resistivity but with a constant temperature coefficient of resistance (TCR) by enhancing the formation of embedded VO2 nanocrystals (NCs), while keeping the VOx film composition unchanged. A model based on charge hopping between VO2 NCs is proposed to illustrate the relationship between the temperature-dependent resistivity and the constant TCR.
Keywords :
amorphous semiconductors; annealing; electrical resistivity; hopping conduction; nanostructured materials; semiconductor thin films; vanadium compounds; TCR; VO2-VOx; charge hopping; nanocrystals; post-annealing; size 55 nm; temperature coefficient of resistance; temperature-dependent resistivity; thin film resistivity; Annealing; Conductivity; Resistance; Silicon; Substrates; Temperature measurement; X-ray scattering; Vanadium oxide; nanocrystal; post-annealing; post-annealing.; temperature coefficient of resistance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2326691
