DocumentCode :
444357
Title :
Analysis of dilute nitride semiconductor laser gain materials in the 1.3-1.5 μm range
Author :
Schlichenmaier, C. ; Thranhardt ; Meier, T. ; Grüning, H. ; Klar, P.J. ; Heimbrodt, W. ; Koch, S.W. ; Chow, W.W. ; Hader, J. ; Moloney, J.V.
Author_Institution :
Dept. of Phys. & Mater. Sci. Center, Philipps-Univ., Marburg, Germany
Volume :
2
fYear :
2005
fDate :
22-27 May 2005
Firstpage :
1053
Abstract :
Theory/experiment comparisons of optical properties of dilute nitride heterostructures are presented. A type I - type II transition in In0.23Ga0.77As/GaNxAs1-x heterostructures is identified. The model is used for a study of lasing in the 1.3-1.5 μm range.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical materials; semiconductor lasers; 1.3 to 1.5 micron; A type I transition; A type II transition; InGaAs-GaNAs; dilute nitride heterostructures; dilute nitride semiconductor laser gain material; optical properties; semiconductor heterostructures; Absorption; Equations; Gallium arsenide; Laser modes; Laser theory; Optical materials; Optical pumping; Optical scattering; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
Type :
conf
DOI :
10.1109/QELS.2005.1549027
Filename :
1549027
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=444357
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