Title :
Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 μm
Author :
Cade, N.I. ; Gotoh, H. ; Kamada, H. ; Tawara, T. ; Sogawa, T. ; Nakano, H. ; Okamoto, H.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
Abstract :
Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe the formation of neutral and charged exciton complexes and a large s-p shell splitting.
Keywords :
III-V semiconductors; bismuth; excitons; gallium compounds; indium compounds; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; 1300 nm; Bi:InGaAs; InAs-InGaAs; charged exciton complex; neutral exciton complex; photoluminescence spectra; quantum dots; quantum well; s-p shell splitting; Excitons; Gallium arsenide; Indium gallium arsenide; Laboratories; Luminescence; Photoluminescence; Quantum dots; Spectroscopy; Stimulated emission; Structural shells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549032
