Title :
Enhanced phonon-assisted absorption of InGaAs quantum dots confined in a planar microcavity
Author :
Wang, X.Y. ; Shih, C.K. ; Zhang, J.Y. ; Ma, W.Q. ; Salamo, G.J. ; Xiao, Min
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
Abstract :
By utilizing photoluminescence excitation spectroscopy, we observed enhanced phonon-assisted absorption from InGaAs QDs confined in a planar microcavity. We also present the ability to couple two cavity modes through the phonon absorption and emission processes.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microcavities; photoluminescence; semiconductor quantum dots; InGaAs; InGaAs quantum dots; cavity mode coupling; emission processes; enhanced phonon-assisted absorption; phonon absorption; photoluminescence excitation spectroscopy; planar microcavity; Absorption; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser modes; Microcavities; Mirrors; Phonons; Potential well; Quantum dots;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549035