DocumentCode
444365
Title
Enhanced phonon-assisted absorption of InGaAs quantum dots confined in a planar microcavity
Author
Wang, X.Y. ; Shih, C.K. ; Zhang, J.Y. ; Ma, W.Q. ; Salamo, G.J. ; Xiao, Min
Author_Institution
Dept. of Phys., Texas Univ., Austin, TX, USA
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1076
Abstract
By utilizing photoluminescence excitation spectroscopy, we observed enhanced phonon-assisted absorption from InGaAs QDs confined in a planar microcavity. We also present the ability to couple two cavity modes through the phonon absorption and emission processes.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microcavities; photoluminescence; semiconductor quantum dots; InGaAs; InGaAs quantum dots; cavity mode coupling; emission processes; enhanced phonon-assisted absorption; phonon absorption; photoluminescence excitation spectroscopy; planar microcavity; Absorption; Gallium arsenide; Indium gallium arsenide; Laser excitation; Laser modes; Microcavities; Mirrors; Phonons; Potential well; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549035
Filename
1549035
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