Quantum wells intermixing in InGaAsP/InGaAsP laser structure for photonic integrated circuits

Author

Nah, Jongbum ; LiKamWa, Patrick

Author_Institution

Coll. of Opt. & Photonics, Central Florida Univ., Orlando, FL, USA

Volume

2

fYear

2005

fDate

22-27 May 2005

Firstpage

1257

Abstract

We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3 dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical directional couplers; optical fabrication; quantum well lasers; semiconductor quantum wells; InGaAsP-InGaAsP; InGaAsP-InGaAsP laser structure; disordered section; impurity free vacancy induced quantum well intermixing technique; multiple quantum well structure; photonic device application; photonic integrated circuit; selective area bandgap tuning; waveguide directional coupler fabrication; Directional couplers; Integrated optics; Optical buffering; Optical films; Optical waveguides; Optical wavelength conversion; Photonic band gap; Photonic integrated circuits; Quantum well lasers; Rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2005. QELS '05

Print_ISBN

1-55752-796-2

Type

conf

DOI

10.1109/QELS.2005.1549097

Filename

1549097