DocumentCode
444426
Title
Enhancement of resonant Raman scattering from ZnO quantum dots
Author
Wen-Feng Hsieh ; Hsu, Hsu-Cheng ; Cheng, Hsin-Ming ; Lin, Kuo-Feng
Author_Institution
Dept. of Photonics & Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1260
Abstract
Efficient resonant Raman scattering (RRS) were observed in ZnO quantum dots (ZnO-QDs). The size dependent shift of UV-emission reveals quantum confinement governs the enhancement of RRS through modifying the phonon state density in ZnO-QDs.
Keywords
II-VI semiconductors; Raman spectra; phonons; semiconductor quantum dots; size effect; zinc compounds; UV-emission; ZnO; ZnO quantum dots; phonon state density; quantum confinement; resonant Raman scattering enhancement; size dependent shift; Frequency; Optical materials; Optical scattering; Phonons; Quantum dots; Raman scattering; Resonance; Spectroscopy; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549098
Filename
1549098
Link To Document