DocumentCode
444428
Title
Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 μm
Author
Fu, Junxian ; Yu, Xiaojun ; Kuo, Yu-Hsuan ; Harris, James S., Jr.
Author_Institution
Dept. of Appl. Phys., Stanford Univ., CA, USA
Volume
2
fYear
2005
fDate
22-27 May 2005
Firstpage
1266
Abstract
Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characterized and the absorption coefficient was measured with transmission spectroscopy.
Keywords
III-V semiconductors; absorption coefficients; gallium arsenide; gallium compounds; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; semiconductor quantum wells; InGaAs-InGaAs; InGaAs-InP; InP; InP substrate; absorption coefficient; extended InGaAs-InGaAs quantum structures; material quality; molecular beam epitaxy; near infrared photodetection; transmission spectroscopy; two strain compensation techniques; Absorption; Capacitive sensors; Flexible manufacturing systems; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical materials; Optical sensors; Optical superlattices; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1549100
Filename
1549100
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