Title :
Extended InGaAs/InGaAs quantum structures for near infrared photodetection beyond 1.9 μm
Author :
Fu, Junxian ; Yu, Xiaojun ; Kuo, Yu-Hsuan ; Harris, James S., Jr.
Author_Institution :
Dept. of Appl. Phys., Stanford Univ., CA, USA
Abstract :
Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characterized and the absorption coefficient was measured with transmission spectroscopy.
Keywords :
III-V semiconductors; absorption coefficients; gallium arsenide; gallium compounds; indium compounds; infrared detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; semiconductor quantum wells; InGaAs-InGaAs; InGaAs-InP; InP; InP substrate; absorption coefficient; extended InGaAs-InGaAs quantum structures; material quality; molecular beam epitaxy; near infrared photodetection; transmission spectroscopy; two strain compensation techniques; Absorption; Capacitive sensors; Flexible manufacturing systems; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical materials; Optical sensors; Optical superlattices; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN :
1-55752-796-2
DOI :
10.1109/QELS.2005.1549100
