DocumentCode
44444
Title
Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients
Author
Jeng Shiuh Cheong ; Hayat, Majeed M. ; Xinxin Zhou ; David, John P. R.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
Volume
62
Issue
6
fYear
2015
fDate
Jun-15
Firstpage
1946
Lastpage
1952
Keywords
III-V semiconductors; avalanche photodiodes; impact ionisation; GaAs; III-V semiconductor lattice; InP; Si; SiC; avalanche multiplication; avalanche photodiodes; carrier threshold energy; dead-space effect; excess noise; experimental ionization coefficients; impact ionization coefficients; ionization probability; local model framework; nonlocal ionization coefficients; size 0.05 mum; Impact ionization; Iron; Mathematical model; Noise; PIN photodiodes; Avalanche breakdown; avalanche diodes; avalanche photodiodes (APDs); impact ionization; ionization coefficient; ionization coefficient.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2015.2422789
Filename
7095558
Link To Document