44444

Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients

Jeng Shiuh Cheong ; Hayat, Majeed M. ; Xinxin Zhou ; David, John P. R.

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

62

6

2015

Jun-15

1946

1952

III-V semiconductors; avalanche photodiodes; impact ionisation; GaAs; III-V semiconductor lattice; InP; Si; SiC; avalanche multiplication; avalanche photodiodes; carrier threshold energy; dead-space effect; excess noise; experimental ionization coefficients; impact ionization coefficients; ionization probability; local model framework; nonlocal ionization coefficients; size 0.05 mum; Impact ionization; Iron; Mathematical model; Noise; PIN photodiodes; Avalanche breakdown; avalanche diodes; avalanche photodiodes (APDs); impact ionization; ionization coefficient; ionization coefficient.;

English

Electron Devices, IEEE Transactions on

ieee

0018-9383

jour

10.1109/TED.2015.2422789

7095558