Radiative characteristic of on-chip terahertz (THz) structures

There are possibilities for producing narrow-band THz radiation, using either free or bound electrons (solid state), in micro-undulatory configurations because integrated circuit technology appears well matched to this region, which extends from about 300 GHz to 30 THz. We present electromagnetic simulations for various new on-chip THz configurations. Interference effects are studied in terms of both structural shape and tuning parameters to improve output intensity, bandwidth and directionality. Results imply that we can design an efficient THz radiator by tuning the phases of the EM-waves propagating from the different sections of the structure. Results are validated by comparing two independent calculations from the developed FDTD code and a commercial finite-element code (HFSS); they agree quite well. We concentrate mainly on the radiative characteristics and determine whether the underlying electromagnetic assumptions are sound.