Advances in hyperspeed digital interconnects using electromagnetic bandgap technology: measured low-loss 43-GHz passband centered at 50 GHz

We have performed a computational and experimental study of a promising new wireless interconnect for high-speed digital circuits employing linear defects in electromagnetic bandgap structures at 50 GHz center frequency. Our recent results confirm the scalability of this technology. We found that employing low-loss dielectrics can maintain the approximately 80% bandwidth with excellent stopband, gain flatness, and matching characteristics previously observed at 10 GHz. When further scaled to millimeter-wave center frequencies above 300 GHz (to leverage emerging silicon transistor technology), EBG wireless interconnects should be able to support data rates in the hundreds of Gbit/s, assuming the availability of suitable low-loss dielectrics.