DocumentCode
445309
Title
A novel tunable wet etched mid-IR pentenary AIInGaAsSb junction laser at 2.34-2.44 /spl mu/m
Author
Bugge, Renato ; Fimland, Bjorn-Ove
Author_Institution
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
15
Lastpage
16
Abstract
A new design for tunable mid-IR lasers is proposed and demonstrated. The design involves a new quantum well structure with AlInGaAsSb barriers and InGaAsSb wells, a new rapid thermal annealing (RTA) processing step and a new design for a wet etched waveguide junction
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; rapid thermal annealing; semiconductor lasers; waveguide junctions; 2.34 to 2.44 micron; AlInGaAsSb; junction barriers; mid-IR pentenary junction laser; quantum well structure; rapid thermal annealing; tunable junction laser; tunable mid-IR lasers; wet etched junction laser; wet etched waveguide junction; Distributed feedback devices; Gas lasers; Laser feedback; Laser modes; Optical design; Testing; Tunable circuits and devices; Waveguide junctions; Waveguide lasers; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553035
Filename
1553035
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