Title :
Data retention behavior in the embedded SONOS nonvolatile memory cell
Author :
Chae, H.S. ; Jung, Y.S. ; Seo, S. ; Han, J.H. ; Hyun, J.W. ; Park, G.W. ; Um, M.Y. ; Kim, J.H. ; Lee, B.J. ; Kim, K.C. ; Cho, I.W. ; Bae, G.J. ; Lee, N.I. ; Kang, S.T. ; Kim, C.-W.
Author_Institution :
Devices Lab, Samsung Adv. Inst. of Technol., Kyungki-do
Abstract :
In this paper, data retention loss phenomena after write/erase cycles and time in an embedded SONOS memory cell were investigated for the first time. By analyzing source junction leakage current, it was determined that the loss of holes in nitride also results in an increase in threshold voltage, a drop in ion, and a degradation of sub-threshold slope
Keywords :
leakage currents; random-access storage; semiconductor junctions; data retention behavior; embedded SONOS; leakage current; nonvolatile memory cell; source junction; write/erase cycles; Charge carrier processes; Current measurement; Dielectrics; Electronic mail; Electrons; Large scale integration; Leakage current; Nonvolatile memory; SONOS devices; Temperature;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553043
