DocumentCode
445315
Title
Nanocrystal physical attributes influencing non-volatile memory performance
Author
Hradsky, B. ; Muralidhar, R. ; Rao, R.A. ; Steimle, B. ; Straub, S. ; White, B.E., Jr. ; Sadd, M. ; Anderson, S.G.H. ; Yater, J.A. ; Swift, C.T. ; Acred, B. ; Peschke, J. ; Prinz, E.J. ; Chang, K.M.
Volume
1
fYear
2005
fDate
June 20-22, 2005
Firstpage
37
Lastpage
38
Keywords
Atomic layer deposition; Electrons; Energy states; Human computer interaction; Manufacturing processes; Nanocrystals; Nonvolatile memory; Silicon; Temperature sensors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553044
Filename
1553044
Link To Document