The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND type charge trap flash memory devices
Author :
Jeon, Sanghun ; Han, Jeong Hee ; Junghoon Lee ; Hyun, Jaewoong ; Ju Hyung Kim ; Jeong, Y.S. ; Chae, Hee Soon ; Chae, Soo Doo ; Kim, Ju Hyung ; Lee, Junghoon ; Choi, Sangmoo ; Jang, Man ; Hwang, Hyunsang ; Chungwoo Kim
Volume :
1
fYear :
2005
fDate :
20-22 June 2005
Firstpage :
39
Lastpage :
40
Keywords :
Dielectric devices; Electron traps; Flash memory; Heterojunction bipolar transistors; High K dielectric materials; High-K gate dielectrics; Materials science and technology; Silicon compounds; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
