Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications

Author

Lee, Dongsoo ; Choi, Dooho ; Choi, Hyejung ; Sim, Hyunjun ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

45

Lastpage

46

Abstract

The authors have investigated the resistance switching characteristics of non-stoichiometric ZrO_x and STO_x thin films for nonvolatile memory application. The non-stoichiometric ZrO_x films were grown in a reactive sputtering method using Zr target and SrTiO_x (STO_x) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO₃ target

Keywords

pulsed laser deposition; random-access storage; semiconductor thin films; sputter etching; strontium compounds; titanium compounds; zirconium compounds; SrTiO₃; ZrO; nonstoichiometric thin films; nonvolatile memory; pulsed laser deposition; reactive sputtering; reversible resistance switching; Electric resistance; Electric variables; Electronic mail; MOSFET circuits; Materials science and technology; Nonvolatile memory; Optical pulses; Pulsed laser deposition; Sputtering; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553048

Filename

1553048