DocumentCode :
445319
Title :
Reversible resistance switching of the non-stoichiometric ZrO/sub x/ and SrTiO/sub x/ for non-volatile memory applications
Author :
Lee, Dongsoo ; Choi, Dooho ; Choi, Hyejung ; Sim, Hyunjun ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol.
Volume :
1
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
45
Lastpage :
46
Abstract :
The authors have investigated the resistance switching characteristics of non-stoichiometric ZrOx and STOx thin films for nonvolatile memory application. The non-stoichiometric ZrOx films were grown in a reactive sputtering method using Zr target and SrTiOx (STOx) films were deposited by pulsed laser deposition (PLD) method using a pure SrTiO3 target
Keywords :
pulsed laser deposition; random-access storage; semiconductor thin films; sputter etching; strontium compounds; titanium compounds; zirconium compounds; SrTiO3; ZrO; nonstoichiometric thin films; nonvolatile memory; pulsed laser deposition; reactive sputtering; reversible resistance switching; Electric resistance; Electric variables; Electronic mail; MOSFET circuits; Materials science and technology; Nonvolatile memory; Optical pulses; Pulsed laser deposition; Sputtering; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553048
Filename :
1553048
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=445319
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