• DocumentCode
    445320
  • Title

    Germanium sulfide-based solid electrolytes for non-volatile memory

  • Author

    Balakrishnan, Muralikrishnan ; Kozicki, Michael N. ; Gopalan, Chakravarthy ; Mitkova, Maria

  • Author_Institution
    Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    47
  • Lastpage
    48
  • Abstract
    In the present work, the authors describe PMC memory devices based on Ag-Ge-S electrolytes. These have excellent temperature stability and are compatible with most BEOL processing in CMOS integrated circuits
  • Keywords
    CMOS integrated circuits; IV-VI semiconductors; chalcogenide glasses; germanium compounds; random-access storage; silver compounds; solid electrolytes; stability; Ag-Ge-S; BEOL processing; CMOS integrated circuits; PMC memory devices; nonvolatile memory; programmable metallization cell; solid electrolytes; temperature stability; Annealing; Dielectrics; Germanium; Glass; Integrated circuit interconnections; Nonvolatile memory; Scalability; Solid state circuits; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553049
  • Filename
    1553049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445320