Title :
Germanium sulfide-based solid electrolytes for non-volatile memory
Author :
Balakrishnan, Muralikrishnan ; Kozicki, Michael N. ; Gopalan, Chakravarthy ; Mitkova, Maria
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ
Abstract :
In the present work, the authors describe PMC memory devices based on Ag-Ge-S electrolytes. These have excellent temperature stability and are compatible with most BEOL processing in CMOS integrated circuits
Keywords :
CMOS integrated circuits; IV-VI semiconductors; chalcogenide glasses; germanium compounds; random-access storage; silver compounds; solid electrolytes; stability; Ag-Ge-S; BEOL processing; CMOS integrated circuits; PMC memory devices; nonvolatile memory; programmable metallization cell; solid electrolytes; temperature stability; Annealing; Dielectrics; Germanium; Glass; Integrated circuit interconnections; Nonvolatile memory; Scalability; Solid state circuits; Temperature distribution; Voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553049
