DocumentCode
445324
Title
Field-plated AlGaN/GaN HEMTs with power density of 9.1 W/mm at 18 GHz
Author
Kumar, V. ; Chen, G. ; Guo, S. ; Peres, B. ; Adesida, I.
Volume
1
fYear
2005
fDate
June 20-22, 2005
Firstpage
61
Lastpage
62
Keywords
Aluminum gallium nitride; Electrical resistance measurement; Gain; Gallium nitride; HEMTs; MODFETs; Microwave devices; Plasma measurements; Power generation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553055
Filename
1553055
Link To Document