Title :
Modeling of low-frequency noise in single- and double-gate MOSFETs using quantum mechanical approach
Author :
Rai, Shailesh S. ; Islam, Syed S.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., NY
Abstract :
This paper reports a model to calculate low frequency noise in single- and double-gate MOSFETs using a quantum mechanical approach. The cross-sections of the single- and double-gate FETs are shown in the paper
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; double-gate MOSFET; low-frequency noise; quantum mechanical approach; single-gate MOSFET; 1f noise; Doping; Frequency; Low-frequency noise; MOS devices; MOSFETs; Quantum mechanics; Semiconductor device noise; Silicon; Threshold voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553063
