Title :
High mobility Ge pMOS fabricated using a novel heteroepitaxial ge on Si growth method
Author :
Nayfeh, Ammar ; On Chui, Chi ; Yonehara, Takao ; Saraswa, K.C.
Keywords :
Annealing; Atomic layer deposition; Dielectric substrates; Etching; Hydrogen; Lattices; MOSFETs; Rough surfaces; Surface roughness; Temperature;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553069
