Title :
Simulation of hole transport in p-channel Si MOSFETs
Author :
Krishinan, S. ; Vasileska, Dragica ; Fischetti, Massimo V.
Keywords :
Anisotropic magnetoresistance; Charge carrier processes; Computational modeling; Effective mass; Electron devices; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Particle scattering; Silicon germanium;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553070
