DocumentCode :
445342
Title :
Fast high-k AIN MONOS memory with large memory window and good retention
Author :
Lai, C.H. ; Huang, C.C. ; Chiang, K.C. ; Kao, H.L. ; Chen, W.J. ; Chin, Albert ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Volume :
1
fYear :
2005
fDate :
22-22 June 2005
Firstpage :
99
Lastpage :
100
Abstract :
We have obtained good non-volatile memory device integrity of fast 100mus program and 1ms erase time at plusmn13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85degC in the new IrO2-HfAlO-AlN-SiO2-Si MONOS device
Keywords :
aluminium compounds; flash memories; hafnium compounds; iridium compounds; semiconductor storage; silicon; silicon compounds; 1 ms; 100 mus; 2.4 V; 25 C; 3.8 V; 4.5 V; 85 C; IrO2-HfAlO-AlN-SiO2-Si; MONOS; memory window; nonvolatile memory device; Dielectric substrates; Electronic mail; High K dielectric materials; High-K gate dielectrics; Low voltage; MONOS devices; Nonvolatile memory; Physics computing; SONOS devices; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553074
Filename :
1553074
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=445342
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