• DocumentCode
    445342
  • Title

    Fast high-k AIN MONOS memory with large memory window and good retention

  • Author

    Lai, C.H. ; Huang, C.C. ; Chiang, K.C. ; Kao, H.L. ; Chen, W.J. ; Chin, Albert ; Chi, C.C.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    We have obtained good non-volatile memory device integrity of fast 100mus program and 1ms erase time at plusmn13V, large initial memory window of 4.5V, and extrapolated 10-year memory window of 3.8V or 2.4V at 25 or 85degC in the new IrO2-HfAlO-AlN-SiO2-Si MONOS device
  • Keywords
    aluminium compounds; flash memories; hafnium compounds; iridium compounds; semiconductor storage; silicon; silicon compounds; 1 ms; 100 mus; 2.4 V; 25 C; 3.8 V; 4.5 V; 85 C; IrO2-HfAlO-AlN-SiO2-Si; MONOS; memory window; nonvolatile memory device; Dielectric substrates; Electronic mail; High K dielectric materials; High-K gate dielectrics; Low voltage; MONOS devices; Nonvolatile memory; Physics computing; SONOS devices; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553074
  • Filename
    1553074
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445342