Cold and hot carrier effects on HfO₂ and HfSiO NMOSFETS with tin gate electrode

Author

Sim, J.H. ; Song, S.C. ; Choi, R. ; Young, C.D. ; Bersuker, G. ; Bae, S.H. ; Kwong, D.L. ; Lee, B.H.

Volume

fYear

2005

fDate

June 20-22, 2005

Firstpage

103

Lastpage

104

Keywords

Degradation; Electrodes; Hafnium oxide; High-K gate dielectrics; Hot carrier effects; Hot carriers; MOSFETs; Pulse measurements; Stress; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Print_ISBN

0-7803-9040-7

Type

DOI

10.1109/DRC.2005.1553076

Filename

1553076

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