DocumentCode :
445343
Title :
Cold and hot carrier effects on HfO
2
and HfSiO NMOSFETS with tin gate electrode
Author :
Sim, J.H. ; Song, S.C. ; Choi, R. ; Young, C.D. ; Bersuker, G. ; Bae, S.H. ; Kwong, D.L. ; Lee, B.H.
Volume :
1
fYear :
2005
fDate :
June 20-22, 2005
Firstpage :
103
Lastpage :
104
Keywords :
Degradation; Electrodes; Hafnium oxide; High-K gate dielectrics; Hot carrier effects; Hot carriers; MOSFETs; Pulse measurements; Stress; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553076
Filename :
1553076
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=445343
