DocumentCode
445346
Title
Electronic polarization effects on capacitance-voltage characteristics of metal-SiO/sub 2/-thin film organic semiconductor devices
Author
Gunther, Norman ; Niemann, Darrell ; Barycza, Mark ; Kwong, Charles ; Rahman, Mahmud
Author_Institution
Dept. of Electr. Eng., Santa Clara Univ., CA
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
111
Lastpage
112
Abstract
Recently thin film organic semiconductor (OS) materials such as poly-phenylene-vinylene (PPV), pentacene, etc., have attracted the attention of researchers for use in low cost alternatives to existing silicon applications including RFDDs as well as promising new frontiers such as flexible electronic displays. Typically, these films exhibit strong anisotropic electronic polarization effects and possess conduction properties similar to those in p-type amorphous silicon. The capacitance-voltage characteristic can be considered as one of the effective tools for investigating electronic polarization effects on the performance of devices using such films
Keywords
organic semiconductors; polarisation; semiconductor thin films; silicon compounds; RFDD; SiO2; anisotropic electronic polarization effects; capacitance-voltage characteristics; p-type amorphous silicon; thin film organic semiconductor devices; Capacitance-voltage characteristics; Conducting materials; Costs; Optical polarization; Organic materials; Organic semiconductors; Pentacene; Semiconductor films; Semiconductor materials; Semiconductor thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553080
Filename
1553080
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