• DocumentCode
    445346
  • Title

    Electronic polarization effects on capacitance-voltage characteristics of metal-SiO/sub 2/-thin film organic semiconductor devices

  • Author

    Gunther, Norman ; Niemann, Darrell ; Barycza, Mark ; Kwong, Charles ; Rahman, Mahmud

  • Author_Institution
    Dept. of Electr. Eng., Santa Clara Univ., CA
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    Recently thin film organic semiconductor (OS) materials such as poly-phenylene-vinylene (PPV), pentacene, etc., have attracted the attention of researchers for use in low cost alternatives to existing silicon applications including RFDDs as well as promising new frontiers such as flexible electronic displays. Typically, these films exhibit strong anisotropic electronic polarization effects and possess conduction properties similar to those in p-type amorphous silicon. The capacitance-voltage characteristic can be considered as one of the effective tools for investigating electronic polarization effects on the performance of devices using such films
  • Keywords
    organic semiconductors; polarisation; semiconductor thin films; silicon compounds; RFDD; SiO2; anisotropic electronic polarization effects; capacitance-voltage characteristics; p-type amorphous silicon; thin film organic semiconductor devices; Capacitance-voltage characteristics; Conducting materials; Costs; Optical polarization; Organic materials; Organic semiconductors; Pentacene; Semiconductor films; Semiconductor materials; Semiconductor thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553080
  • Filename
    1553080