DocumentCode
445355
Title
Increased reliability of a-Si TFT´s deposited on clear plastic substrates at high temperatures
Author
Long, K. ; Kattamis, A. ; Cheng, I.-C. ; Gleskova, H. ; Wagner, S. ; Sturm, J.C.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ
Volume
1
fYear
2005
fDate
22-22 June 2005
Firstpage
141
Lastpage
142
Abstract
In this paper, the authors have developed an a-Si TFT process on clear plastic substrates which allows direct transfer of industry a-Si TFT process on glass to plastic substrate for flexible electronics applications. The high temperature process increases the reliability of the a-Si TFT´s, which is critical for OLED´s where one TFT must operate in a DC condition
Keywords
amorphous semiconductors; flexible electronics; high-temperature techniques; plastics; reliability; silicon; substrates; thin film transistors; DC condition; OLED; Si; a-Si TFT process; clear plastic substrates; flexible electronics; high temperature process; Active matrix technology; Amorphous silicon; Flat panel displays; Glass industry; Organic light emitting diodes; Plastics; Substrates; Temperature; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location
Santa Barbara, CA
Print_ISBN
0-7803-9040-7
Type
conf
DOI
10.1109/DRC.2005.1553094
Filename
1553094
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