• DocumentCode
    445361
  • Title

    Enhanced electroluminescence in suspended carbon nanotube transistors

  • Author

    Chen, Jia ; Freitag, Marcus ; Tsang, James ; Fu, Qiang ; Liu, Jie ; Avouris, Phaedon

  • Author_Institution
    J. Watson Res. Center, IBMT, Yorktown Heights, NY
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    In this work, we report the first electroluminescence results from suspended CNTFETs. We find not only an increase in quantum efficiency by 2-3 orders of magnitude, but a completely different dependence of the light emission on the electrical properties of the CNTFET. To fabricate a suspended CNTFET, we etched 2-10 mum wide trenches in 200 nm thick SiO2 on Si wafers
  • Keywords
    carbon nanotubes; electroluminescence; etching; silicon compounds; superconducting transistors; 2 to 10 micron; 200 nm; CNTFET; Si wafers; SiO2; carbon nanotube field effect transistors; electrical properties; electroluminescence; etching; light emission; quantum efficiency; CNTFETs; Carbon nanotubes; Charge carrier processes; Electroluminescence; Electron emission; Electron tubes; Light sources; Radiative recombination; Schottky barriers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553105
  • Filename
    1553105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445361