DocumentCode :
445363
Title :
High power AlGaN/GaN HEMTs for wireless base station application
Author :
Joshin, K. ; Kikkawa, T.
Volume :
1
fYear :
2005
fDate :
June 20-22, 2005
Firstpage :
173
Lastpage :
176
Keywords :
Aluminum gallium nitride; Base stations; Gallium nitride; HEMTs; High power amplifiers; MODFETs; Multiaccess communication; Pulse measurements; Radio frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553108
Filename :
1553108
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=445363
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