Title :
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Author :
Cai, Yong ; Zhou, Yugang ; Chen, Kevin J. ; Lau, Kei May
Keywords :
Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; MODFETs; Plasma applications; Plasma devices; Plasma sources; Rapid thermal annealing; Voltage;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553110
