Title :
Sub-10 nm gate length metal/high-k SOI MOSFETs with NiSi/sub 2/ [111]-facetted full silicide source/drain
Author :
Watanabe, Y. ; Migita, S. ; Mise, N. ; Nabatame, T. ; Satake, H. ; Toriumi, A.
Author_Institution :
MIRAI-ASET, Tsukuba
Abstract :
Metal/high-k SOI MOSFETs with NiSi2/Si (111)-facetted FUSI S/D are promising for aggressively scaled devices down to sub-10 nm gate length. The facet junction technique that we have developed works more effectively as the gate length becomes smaller. This device concept can be applied to 3D structures such as FinFETs, and it can also relieve the scaling of SOI thickness
Keywords :
MOSFET; high-temperature electronics; silicon compounds; silicon-on-insulator; MOSFET; NiSi2-Si; full silicide source/drain; high-k SOI; sub-10 nm gate length metal; Annealing; High K dielectric materials; High-K gate dielectrics; Immune system; Ion implantation; MOSFETs; Schottky barriers; Silicides; Silicon; Temperature;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553118
