Higher k HfTaTiO gate dielectric with improved material and electrical characteristics

Author

Lu, N. ; Li, H.J. ; Gardner, M. ; Kwong, D.L.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX

Volume

1

fYear

2005

fDate

22-22 June 2005

Firstpage

221

Lastpage

222

Abstract

Physical and electrical characteristics of HfTaTiO gate dielectric have been systematically investigated for the first time. HfTaTiO has a higher dielectric constant (kappa~56) and acceptable barrier height to Si (phi=1.0eV), and ultra-thin EOT(~9Aring) has been achieved. HfTaTiO dielectric shows higher crystallization temperature (900degC), reduced hysteresis, 50% higher mobility and improved V_th instability than HfO₂. Moreover, HfTaTiO exhibits excellent SILC and breakdown characteristics

Keywords

hafnium compounds; high-k dielectric thin films; permittivity; tantalum compounds; titanium compounds; 900 C; HfTaTiO; SILC; barrier height; breakdown characteristics; crystallization temperature; dielectric constant; electrical characteristics; gate dielectric; hysteresis; material characteristics; ultra-thin EOT; Annealing; Bonding; CMOS technology; Crystallization; Dielectric constant; Dielectric materials; Electric variables; Hafnium oxide; Temperature; Thermal degradation;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference Digest, 2005. DRC '05. 63rd

Conference_Location

Santa Barbara, CA

Print_ISBN

0-7803-9040-7

Type

conf

DOI

10.1109/DRC.2005.1553129

Filename

1553129