• DocumentCode
    445375
  • Title

    Effects of TiN overlay on ALD TaCN metal gate/high-k MOSFET characteristics

  • Author

    Zhang, Z.B. ; Song, S.C. ; Choi, K. ; Sim, J.H. ; Majhi, P. ; Lee, B.H.

  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    223
  • Lastpage
    224
  • Abstract
    This paper describes a simple process that can tune the work function of ALD TaCN on HfO2 from 4.47eV to 4.77eV by adding a MOCVD TiN overlayer. It also discusses the device characteristics of TaCN and TiN/TaCN (TaCN with a TiN overlayer) metal gate/high-k MOSFETs and presents a manufacturable process for integrating the dual metal gate/high-k CMOS in FD-FET technology
  • Keywords
    MOCVD; MOSFET; atomic layer deposition; carbon compounds; dielectric thin films; hafnium compounds; tantalum compounds; titanium compounds; work function; 4.47 to 4.77 eV; ALD; FD-FET technology; HfO2; MOCVD; MOSFET; TiN-TaCN; manufacturable process; metal gate; work function; CMOS process; CMOS technology; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOCVD; MOS devices; MOSFET circuits; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553130
  • Filename
    1553130
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445375