• DocumentCode
    445382
  • Title

    Electrical characterization of individual GaN nanowires

  • Author

    Stern, Eric ; Cheng, Guosheng ; Cimpoiasu, Elena ; Klie, Robert ; Klemic, James ; Kretzschmar, Ilona ; Hyland, James ; Sanders, Aric ; Munden, Ryan ; Reed, Mark

  • Author_Institution
    Dept. of Biomed. Eng., Yale Univ., New Haven, CT
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    239
  • Lastpage
    240
  • Abstract
    The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism
  • Keywords
    CVD coatings; III-V semiconductors; gallium compounds; nanowires; wide band gap semiconductors; GaN; NW devices; growth parameters; hot wall CVD; nanowires; vapor-liquid-solid mechanism; wire quality; Charge carrier density; Contacts; Electrodes; Gallium nitride; Intrusion detection; Nanomaterials; Nanowires; Physics; Throughput; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553138
  • Filename
    1553138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=445382