Title :
Electrical characterization of individual GaN nanowires
Author :
Stern, Eric ; Cheng, Guosheng ; Cimpoiasu, Elena ; Klie, Robert ; Klemic, James ; Kretzschmar, Ilona ; Hyland, James ; Sanders, Aric ; Munden, Ryan ; Reed, Mark
Author_Institution :
Dept. of Biomed. Eng., Yale Univ., New Haven, CT
Abstract :
The authors performed a thorough electrical characterization of hot-wall-CVD fabricated GaN nanowires (NWs) by studying over 500 single NW devices, and have extracted the growth parameters responsible for wire quality. Wires were grown by the vapor-liquid-solid mechanism
Keywords :
CVD coatings; III-V semiconductors; gallium compounds; nanowires; wide band gap semiconductors; GaN; NW devices; growth parameters; hot wall CVD; nanowires; vapor-liquid-solid mechanism; wire quality; Charge carrier density; Contacts; Electrodes; Gallium nitride; Intrusion detection; Nanomaterials; Nanowires; Physics; Throughput; Wire;
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Conference_Location :
Santa Barbara, CA
Print_ISBN :
0-7803-9040-7
DOI :
10.1109/DRC.2005.1553138
