DocumentCode :
445386
Title :
260 GHz F
T
, 280 GHz f
MAX
AlSb/InAs HEMT technology
Author :
Tsai, R. ; Lange, M. ; Lee, L.J. ; Nam, P. ; Namba, C. ; Liu, P.H. ; Sandhu, R. ; Grundbacher, R. ; Deal, W. ; Gutierrez, A.
Volume :
1
fYear :
2005
fDate :
June 20-22, 2005
Firstpage :
257
Lastpage :
258
Keywords :
Circuits; Fabrication; Frequency; Gain; HEMTs; Hall effect; Indium gallium arsenide; Indium phosphide; Space technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference Digest, 2005. DRC '05. 63rd
Print_ISBN :
0-7803-9040-7
Type :
conf
DOI :
10.1109/DRC.2005.1553146
Filename :
1553146
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=445386
